1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5
Rent:
Rent this article for
USD
10.1063/1.4720182
/content/aip/journal/apl/100/21/10.1063/1.4720182
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720182
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristics, plotted as Log(I) vs the squared root of bias, acquired on a PCM cell at three subsequent times after programming. The STS (Eq. (2)) increase with time leads to the electronic dielectric constant decrease versus time as reported in the inset. The TEM picture, shown in the left top of figure, allowed to extract the amorphous thickness ua of the PCM cell resulting equal to 22 nm.

Image of FIG. 2.
FIG. 2.

Experimental imaginary part of the dielectric function for both the as deposited α-GST film (cyan) and after 173 h (black). Details for the experimental set-up are given in Ref. 12. Dashed red curves fitting for ɛ2 are based on the model described in Refs. 20 and 21.

Image of FIG. 3.
FIG. 3.

Correlation between the decrease of ɛ and the increase of the gap size derived from the absorption spectra analysis by using Eq. (3) (triangles). The relative decrease of ɛ as a function of acquisition times (upper x-axis) is also reported (circles).

Loading

Article metrics loading...

/content/aip/journal/apl/100/21/10.1063/1.4720182
2012-05-23
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720182
10.1063/1.4720182
SEARCH_EXPAND_ITEM