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Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5
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View: Figures


Image of FIG. 1.
FIG. 1.

I-V characteristics, plotted as Log(I) vs the squared root of bias, acquired on a PCM cell at three subsequent times after programming. The STS (Eq. (2)) increase with time leads to the electronic dielectric constant decrease versus time as reported in the inset. The TEM picture, shown in the left top of figure, allowed to extract the amorphous thickness ua of the PCM cell resulting equal to 22 nm.

Image of FIG. 2.
FIG. 2.

Experimental imaginary part of the dielectric function for both the as deposited α-GST film (cyan) and after 173 h (black). Details for the experimental set-up are given in Ref. 12. Dashed red curves fitting for ɛ2 are based on the model described in Refs. 20 and 21.

Image of FIG. 3.
FIG. 3.

Correlation between the decrease of ɛ and the increase of the gap size derived from the absorption spectra analysis by using Eq. (3) (triangles). The relative decrease of ɛ as a function of acquisition times (upper x-axis) is also reported (circles).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5