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Interfacial confinement in core-shell nanowires due to high dielectric mismatch
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10.1063/1.4720402
/content/aip/journal/apl/100/21/10.1063/1.4720402
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720402
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Figures

Image of FIG. 1.
FIG. 1.

(a) Effect of the self-energy potential on the recombination energy of an electron-hole pair, for different wire radii: 4 nm (×), 6 nm (), 8 nm (▴), and 10 nm (▪). (b) Ground state energies as a function of the core radius for carriers confined in a GaN/HfO2 core-shell heterostructure.

Image of FIG. 2.
FIG. 2.

(a) Overlap between the electron (el) and the light (lh) and heavy (hh) hole wave functions as a function of the core radius R, for several heterostructure materials with different ratios between dielectric constants , represented by different colors. (b) Effective confinement potentials (solid) for R = 30 nm in the GaN/HfO2 case for electrons and heavy holes, along with some examples of their wave functions. Electron wave functions are shown with (dashed) and without (dashed-dotted) taking image charge effects into account, for comparison. Hole wave functions (for ) are depicted for R = 15 nm (blue dashed), 20 nm (red dash dotted), 25 nm (green dotted), and 30 nm (black short dash dotted).

Image of FIG. 3.
FIG. 3.

Confinement energies as a function of the magnetic field for (a) electrons, (b) light, and (c) heavy holes, considering n = 1 and different values of angular momentum index l, in a R = 30 nm GaN/HfO2 NW. (d) The results for a heavy hole in the same system, but neglecting image charge effects.

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/content/aip/journal/apl/100/21/10.1063/1.4720402
2012-05-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial confinement in core-shell nanowires due to high dielectric mismatch
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720402
10.1063/1.4720402
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