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Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
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10.1063/1.4720507
/content/aip/journal/apl/100/21/10.1063/1.4720507
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720507
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Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature PL spectra of a-plane and c-plane MQWs grown under the same growth conditions and (b) the relationship between PL wavelength and PL FWHM for a-plane and c-plane MQWs.

Image of FIG. 2.
FIG. 2.

(a) Changes in PL peak position for c-plane MQWs as a function of external bias and (b) XPS spectra of the a-plane and c-plane MQWs for the In 3d photoelectron peak.

Image of FIG. 3.
FIG. 3.

Electroluminescence images of (a) a-plane and (b) c-plane MQWs-based LEDs at a low current injection, and (c) variation of EL peak wavelength as a function of the injection current. The insets show STEM images of a-plane and c-plane MQWs, respectively.

Image of FIG. 4.
FIG. 4.

The atomic configuration of the GaN surface. Schematic top and cross-sectional view of (a) a-plane GaN and (b) c-plane GaN. Ga atoms are green and N atoms are red spheres.

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/content/aip/journal/apl/100/21/10.1063/1.4720507
2012-05-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720507
10.1063/1.4720507
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