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Acceptor-like deep level defects in ion-implanted ZnO
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10.1063/1.4720514
/content/aip/journal/apl/100/21/10.1063/1.4720514
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720514
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Carrier concentration versus depth profiles for (a) W1-samples implanted by 3 MeV Zn ions to different doses and (b) W2-sample implanted with 6 MeV Zn ions to a dose of and analysed at different temperatures after scan 2 (probing frequency = 1 MHz).

Image of FIG. 2.
FIG. 2.

DLTS signal () for samples before and after implantation with 3 MeV (W1) and 6 MeV (W2) Zn to doses from 1 × 108 to 5 × 109 cm−2.

Image of FIG. 3.
FIG. 3.

DLTS signal () versus temperature for a W2 sample before and after implantation with 6 MeV Zn ions to a dose of 5 × 108 cm−2, scans 1 and 2 are successive ones (up to 460 K) after the implantation.

Image of FIG. 4.
FIG. 4.

Concentration versus depth profiles of E3, E5, and E6 for the W2 samples implanted with 6 MeV Zn ions to doses of 5 × 108 and 1.2 × 109 cm−2, where the λ-effect have been taken into account.

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/content/aip/journal/apl/100/21/10.1063/1.4720514
2012-05-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Acceptor-like deep level defects in ion-implanted ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4720514
10.1063/1.4720514
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