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Carrier concentration versus depth profiles for (a) W1-samples implanted by 3 MeV Zn ions to different doses and (b) W2-sample implanted with 6 MeV Zn ions to a dose of and analysed at different temperatures after scan 2 (probing frequency = 1 MHz).
DLTS signal () for samples before and after implantation with 3 MeV (W1) and 6 MeV (W2) Zn to doses from 1 × 108 to 5 × 109 cm−2.
DLTS signal () versus temperature for a W2 sample before and after implantation with 6 MeV Zn ions to a dose of 5 × 108 cm−2, scans 1 and 2 are successive ones (up to 460 K) after the implantation.
Concentration versus depth profiles of E3, E5, and E6 for the W2 samples implanted with 6 MeV Zn ions to doses of 5 × 108 and 1.2 × 109 cm−2, where the λ-effect have been taken into account.
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