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The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors
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10.1063/1.4721517
/content/aip/journal/apl/100/21/10.1063/1.4721517
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4721517
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The transfer curves as functions of the recovery time in dark and (inset) the corresponding schematic diagram of the (a) bare and (b) NE a-IGZO TFTs after 1000 s light illumination.

Image of FIG. 2.
FIG. 2.

The extracted subgap DOS distribution as a function of Ec − EF at initial state, after 1000 s light illumination, and after ten days recovery in dark for the (a) bare and (b) NE devices.

Image of FIG. 3.
FIG. 3.

The evolution of transfer curves as functions of the recovery time under applied positive gate bias and (inset) the corresponding schematic diagram of the (a) bare and (b) NE a-IGZO TFTs after 1000 s light illumination.

Image of FIG. 4.
FIG. 4.

(a) The recovery time dependence of Vth shift and (b) dependence of the recovery of Vth shift on the thermal annealing temperature in dark and positive gate bias conditions.

Image of FIG. 5.
FIG. 5.

The proposed mechanism for the (a) dark and (b) positive gate bias recovery of the bare and NE a-IGZO TFTs after light illumination.

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/content/aip/journal/apl/100/21/10.1063/1.4721517
2012-05-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4721517
10.1063/1.4721517
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