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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) GIXRD spectra around the reflection of Si(111) surface heated at 820 °C before (top curve) and after (bottom curve) the RF plasma source was turned on, (b) Si(111)-, and (c) surface reconstructions observed by RHEED along the azimuth, respectively, before and after the plasma source was turned on. The cut view of the area delimited by the rectangle in (c) is reported in (d).

Image of FIG. 2.
FIG. 2.

GIXRD scans around (a) and (b) reflections during growth, showing the evolution of β-Si3N4 and GaN peaks, respectively. Peaks integrated intensity is reported versus growth time in (c). Full dots represent the GaN peak integrated intensity evolution, and open dots are related to β-Si3N4. For comparison, full squares represent the evolution of the GaN peak when GaN NWs are grown with an AlN buffer on Si(111).

Image of FIG. 3.
FIG. 3.

(a) Intensity of RHEED lines corresponding to β-Si3N4. In zone A, the plasma is on, but the N shutter is closed. At time t = 0 s, the N shutter is opened: zone B corresponds to direct nitridation of the surface. Sample #1 was then left under a flux of active N (zones C and D). For samples #2 and #3, the RF plasma cell was turned off at t = 25 s: zone C corresponds to the period when their surface was left under inactive N2. At time t = 40 s, sample #2 was exposed to Ga and sample #3 to Al. When exposed to Al, the RHEED pattern of sample #3 changed from (b) to (c). The 1.2 time larger periodicity in (c) compared to (b) indicates that AlN has formed.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy