banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Extremely high-density GaAs quantum dots grown by droplet epitaxy
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

AFM images (400 × 400 nm) of GaAs QDs grown at different temperatures: (a) 300, (b) 200, (c) 130, (d) 80, and (e) 30 °C. Both the droplet formation and crystallization were performed at the same temperature.

Image of FIG. 2.
FIG. 2.

(a) Average height and base size of QDs. For the 300 °C sample, the base size was measured for the entire nanostructure including holes and arrowheads, while the height was measured for the arrowhead part. The average hole diameter and depth are 27 and 2 nm, respectively. (b) Dot density is plotted as a function of the inverse temperature. The line shows a fitting with the scaling law.

Image of FIG. 3.
FIG. 3.

AFM images (100 × 250 nm) of GaAs QDs grown at 30 °C: (a) 3, (b) 5, and (c) 10 MLs of Ga were deposited. As the amount of Ga increases, the density decreases while the size increases due to the coalescence of Ga droplets.

Image of FIG. 4.
FIG. 4.

Low-temperature PL spectra of GaAs QDs with different coverage: 1.1 × 1011 cm−2 (5 MLs grown at 200 °C), 2.7 × 1011 cm−2 (5 MLs, 130 °C), and 7.3 × 1011 cm−2 (3 MLs, 30 °C).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extremely high-density GaAs quantum dots grown by droplet epitaxy