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Schottky diode with excellent performance for large integration density of crossbar resistive memory
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10.1063/1.4722784
/content/aip/journal/apl/100/21/10.1063/1.4722784
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4722784
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The cross-sectional dark-field image of crossbar-type SD device and EDS analysis result. The inset shows the top view of fabricated 1 × 32 crossbar-type SD device.

Image of FIG. 2.
FIG. 2.

(a) Electrical I–V characteristics of 10 × 10 μm2 active area of crossbar-type SD device. The inset shows the local current conduction paths in capacitor-like SD device measured by CAFM. (b) The relationship between current density and active area in both forward and reverse state currents of the crossbar-type and capacitor-like SD device. The inset shows the relationship between relative value of current density and active area in both the CAFM measurement and devices.

Image of FIG. 3.
FIG. 3.

(a) The relationship of extracted Rs of each cells in the crossbar-type SD with various interconnection line widths. (b) The resistance values of interconnection line between neighboring cells in the crossbar-type SD with various interconnection line widths and that of the 50-nm-thick Pt line shown as-fabricated and after post annealing. The “PA” in green star symbol means “post annealing.”

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/content/aip/journal/apl/100/21/10.1063/1.4722784
2012-05-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky diode with excellent performance for large integration density of crossbar resistive memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4722784
10.1063/1.4722784
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