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Near-field artifacts in tip-enhanced Raman spectroscopy
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10.1063/1.4722805
/content/aip/journal/apl/100/21/10.1063/1.4722805
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4722805
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the near-field optical setup with a scanning electron microscope image of the Au-coated AFM tip used in Figs. 2 and 3.

Image of FIG. 2.
FIG. 2.

(a) AFM image of a 40 nm diameter SiGe nanowire on TaC-coated Si substrate. Orientations of the incident laser light and fast and slow AFM scan axes are indicated. (b) Raman spectra collected with the tip at positions #1 and #2, as indicated in (a). The bottom spectrum shows the far-field Raman signal from a collection of SiGe nanowires. Note: The ∼300 cm−1 peak is identified as Ge-Ge, but it may include contributions from the 2TA mode of SiGe (see Ref. 15).

Image of FIG. 3.
FIG. 3.

Rayleigh and Raman scattering signals recorded with an Au-coated tip along the scan line noted in Fig. 2(a) using different spatial filters (e.g., (a) 200 μm and (b) 50 μm pinholes) in the collection path of the confocal microscope. The corresponding topographic scan line is shown in panel (c). Note: The Si-Ge and Si-Si phonon signals were integrated for the Raman profile and the shot noise of the detection system is smaller than the plot symbol.

Image of FIG. 4.
FIG. 4.

Rayleigh and Raman scattering signals recorded with a 200 μm pinhole (a) without a tip present and (b) with a Pd-coated tip along the scan line over a 20 nm SiGe nanowire shown in the inset AFM image (height scale = 25 nm). The corresponding topographic scan line is shown in panel (c). Note: The Si-Ge and Si-Si phonon signals were integrated for the Raman profile and the shot noise of the detection system is smaller than the plot symbol.

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/content/aip/journal/apl/100/21/10.1063/1.4722805
2012-05-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-field artifacts in tip-enhanced Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/21/10.1063/1.4722805
10.1063/1.4722805
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