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A schematic diagram of the baseline bulk InAlGaAs TJ structure (left) and the QWTJ structure, incorporating two 80 Å InGaAs QWs (right). Calculated equilibrium band diagrams for the junction region of the two structures are shown (bottom).
A semi-log plot of current density versus voltage for the bulk TJ and the QWTJ measured using a four-point-probe technique.
The calculated transmission of the double QW region of the QWTJ compared to the same thickness of bulk InGaAs. The inset shows the confined energy levels in the InGaAs quantum well.
Calculated values of normalized efficiency as a function of the CR for idealized 3 J devices using the bulk (dotted blue line) and QW (solid red line) tunnel junctions. The inset shows a schematic of the network simulation layout.
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