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J-V characteristics for the PV cells with 1, 3, and 5 nm of Ta2O5 compared to the base line.
STEM images and EDX profiles of the CdS/CdTe interface. (a) and (c): sample with 1 nm Ta2O5 interlayer (b) and (d): sample without the Ta2O5 interlayer.
J-V characteristics of cells with 28 nm CBD CdS with and without a Ta2O5 interlayer.
Device metrics for the PV cells shown in Figure 1.
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