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(a) Schematic illustration of the proposed SiNW-FET sensors. From the initial double-gate FinFET, the final configuration is formed by an initial gate oxide removal (sacrificial oxide), followed by a slight re-oxidation, and finally the electrical attachment of the NW. Thus, a wide air gap is formed below the NW. AM device and IM device share the same structure and differ only in channel doping type. (b) Bird’s eye view of the scanning electron microscope (SEM) image of the proposed device. (c) Cross-sectional transmission electron microscopy (TEM) image confirming the attachment of the NW onto the active gate.
The pull-in operation and the subsequent current-voltage (I-V) curve of the (a) AM device and (b) IM device. During the pull-in and the subsequent read of the single-gated SiNW FET, VDSof 0.05 V and VG were applied simultaneously.
I-V curves of the (a) AM device and (b) IM device before and after the binding of antigen and antibody of AI. For both devices, the VT shifts rightward after the binding occurs. During the current reading, VDS of 0.05 V was applied.
(a) Comparison of the VT shifts that occurred for AM and IM devices after binding. The horizontal axis represents the concentration of anti-AI, which had been dropped onto devices immobilized with SBP-AIa. The sensitivity of the IM device was enhanced by more than two orders (102) of magnitude when AM was employed. (b) Control experiment for specific binding with antirabbit-IgG.
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