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Current voltage (I–V) characteristics of the devices made from the Si-ncs/PTB7 blend (dashed line) and from the Si-ncs/P3HT blend (dotted green line) under AM 1.5 illumination. The solid curve represents the I–V characteristics of the Si-ncs/PTB7 blend in the dark, and it is shown for comparison. Inset depicts schematically the structure of the hybrid solar cell.
EQE under AM 1.5 illumination of the devices based on as-prepared Si-ncs/PTB7 (squares), as-prepared Si-ncs/P3HT (triangles), and microplasma-treated Si-ncs/PTB7 (circles). All results in these figures have been obtained with cells produced without sonication of the blends. Device based on P3HT/Si-ncs bulk heterojunction solar cell (triangles) are multiplied by 200.
The energy levels of all the components of the solar cell structure: (a) Energy levels of P3HT, silicon nanocrystals (Si-ncs) with quantum confinement, Al, ITO, and PEDOT/PSS and (b) shows corresponding energy level band diagram of Si-ncs blended with PTB7-conjugated polymer.
(a) and (b) I-V characteristics in the dark (solid line) and under AM 1.5 illumination of solar cells based on PTB7/Si-ncs (dashed line) where blends have been sonicated before spin-coating. (a) Devices produced with as-prepared Si-ncs and (b) devices produced with microplasma-treated Si-ncs. (c) Corresponding EQE of the devices based on PTB7/as-prepared Si-ncs (black squares) and PTB7/microplasma-treated Si-ncs (red circles). All results in these figures have been obtained with cells produced with sonication of the blends.
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