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Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures
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10.1063/1.4721519
/content/aip/journal/apl/100/22/10.1063/1.4721519
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4721519
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Figures

Image of FIG. 1.
FIG. 1.

(a) Near band edge emission PL spectra of bare ZnO NWs (dotted line) and MgZnO/ZnO coaxial NW heterostructures (solid line). The inset shows the absence of visible emission. (b) The integrated PL intensities over the entire measured wavelength range for bare ZnO NWs and MgZnO/ZnO coaxial NW heterostructures at various temperatures in the range of 10–200 K.

Image of FIG. 2.
FIG. 2.

10 K TRPL decay curves of ZnO NWs (dotted line) and MgZnO/ZnO coaxial NW heterostructures (solid line).

Image of FIG. 3.
FIG. 3.

(a) Schematics of CdZnO/ZnO axial NW SQW with/without MgZnO shell layer. (b) Scanning electron microscopy image of CdZnO/ZnO axial NW SQWs. (c) High-resolution transmission electron microscopy (HR-TEM) image of the tip of a CdZnO/ZnO axial NW SQW. (d) HR-TEM image of a MgZnO/ZnO coaxial NW heterostructure.

Image of FIG. 4.
FIG. 4.

8 K CL spectra obtained from different electron beam irradiation positions. (a) CdZnO/ZnO axial NW SQW with ZnO stem. (b) CdZnO/ZnO axial NW SQW with a MgZnO/ZnO coaxial stem. The numbers on the right axes are the distances between the electron beam spot and the CdZnO SQW region.

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/content/aip/journal/apl/100/22/10.1063/1.4721519
2012-05-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4721519
10.1063/1.4721519
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