banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation
Rent this article for


Image of FIG. 1.
FIG. 1.

Scheme of broad beam and FIB irradiation (not to scale).

Image of FIG. 2.
FIG. 2.

Flux dependence and scanning dependence of FIB produced nanoholes on Ge (100) at RT using the parameters given in Table I.

Image of FIG. 3.
FIG. 3.

Nanohole pattern produced using broad beam Ga+ irradiation of Ge (100) at normal incidence, RT, 5 keV, and a fluence of 3.0 × 1018 ions/cm2.

Image of FIG. 4.
FIG. 4.

SEM ((a) and (b)) and cross-sectional TEM images ((c) and (d)) of patterns created using a 5 keV Ga+ beam at normal incidence, RT and a fluence of 2.0 × 1017 ions/cm2, (a) and (c) FIB irradiation, (b) and (d) broad beam irradiation.

Image of FIG. 5.
FIG. 5.

Snapshot of a simulation of the BS equations at (a) t = 250; (b) t = 1000 using the following parameters: normal incidence of ions, λ = −1, a = 0.25, b = 0.37, c = 1, , η = 0, mesh size 200 × 200 points, spatial step size Δx,y = 1, time steps Δt = 0.01, and a starting surface with white noise. For the simulations we used the coupled equations (Eqs. (40) and (41)) and denomination of parameters according to Ref. 22.

Image of FIG. 6.
FIG. 6.

(a) Zoom in simulation, (b) SEM image of a FIB produced pattern with a picture width of 200 nm, and (c) AFM image of a broad beam produced pattern with a picture width of 100 nm and a height of 10.6 nm.


Generic image for table
Table I.

Parameters of the FIB produced nanoholes shown in Fig. 2.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation