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(a) Supercell of the PTO/PZO artificial superlattice with various stacking periods, and (b) schematic of local polarization switching in the PTO/PZO superlattice using a scanning probe tip in data storage media applications.
(a) Epitaxial growth and (b)–(d) two-dimensional domain structure of epitaxial artificial superlattices grown on LSCO (001)/MgO (001) with various thicknesses. XRD reciprocal space maps of the hl plane at around PTO/PZO (001) for (b) 50-nm- and (c) 200-nm-thick superlattices, and (d) at around PTO/PZO (204) for a 200-nm-thick superlattice.
Ferroelectric domain images of artificial superlattices in (a) piezoresponse, (b) amplitude, and (c) phase images of the polarized domain structure of a 50-nm-thick PTO/PZO superlattice with (d) corresponding cross-sectional profiles. The dark and bright regions correspond to the areas polarized by applying +10 V and −10 V, respectively. The upper, middle, and lower profiles in (d) represent the line profile shown in (a)–(c) (dotted lines) of the piezoresponse, amplitude, and phase images, respectively, (e) piezoresponse domain images of epitaxial PbZr0.2Ti0.8O3 solid solution thin films with a thickness of 200 nm, and (f) piezoresponse (d33) hysteresis loop for a PTO/PZO superlattice as a function of the sweep voltage.
Evolution of nanoscale domains in artificial superlattices: (a) three-dimensional piezoresponse image of nano-sized domains on a PTO2/PZO2 superlattice written by applying various pulse voltage parameters; (b) polarized domain shape of the superlattice (top) compared to that of 50 nm thick-PbZr0.5Ti0.5O3 thin films (bottom); (c) dependence of the domain radius on the pulse voltage for different pulse widths; and (d) line profile of a single nano-domain written by −4 V for 1 ms along the line of A–B marked in the PFM domain image. The inset (d) shows the formation of a nanoscale domain as small as ∼12 nm.
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