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Capacitance-frequency (C-f) curve measured in strong accumulation (VG = −4 V) for Er2O3/Si with a MOS structure.
Equivalent circuit models of MOS capacitor: (a) LCR meter test model: capacitors, resistors in parallel; (b) model 1, take into account the series resistances; (c) measured and simulated C-f curve for a p-type Si MOS device.
XPS spectra of Si 2p peak for the Er2O3 films with thickness of about 2 nm.
(a) Schematic test model 2 for Er2O3/SiOx/Si structure; (b) equivalent circuit of model 2 with the addition of the C′ and R′ parallel circuit; (c) the simulated capacitance-frequency curve by matlab 7.0 non-linear fitting.
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