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Ferromagnetic Josephson switching device with high characteristic voltage
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10.1063/1.4723576
/content/aip/journal/apl/100/22/10.1063/1.4723576
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4723576
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of SI(S)FS (open circles) and reference SI(S)S (line) with 14-nm ferromagnetic layer Josephson junctions fabricated on different samples from the same wafer. Inset shows a current-voltage characteristic of a SI(S)FS Josephson junction externally shunted with a small resistor.

Image of FIG. 2.
FIG. 2.

Hysteretic dependence of critical current Ic on magnetic H field for Nb-Al/AlOx-Nb-PdFe-Nb shunted SI(S)FS MJJ with a 14 nm ferromagnet layer. Magnetic field sweep directions are shown by arrows. Insets show dual-polarity Ic(H) and magnetization curves Φ(H).

Image of FIG. 3.
FIG. 3.

Switching of SI(S)FS MJJ between “0” and “1” states by remagnetization with external magnetic field. V(t) – average junction voltage and H(t) – applied magnetic field.

Image of FIG. 4.
FIG. 4.

The Ic(H) dependencies for a SI(S)FS MJJ, verifying a memory retention over 7 h. (a) Ic(H) curve with the external magnetic field swept from −20 Oe to 15 Oe. (b) Ic(H) curve with the external magnetic field increased from −20 Oe to O Oe (closed circles) and then after a 7 h hold time further increased from 0 Oe to 15 Oe (open circles).

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/content/aip/journal/apl/100/22/10.1063/1.4723576
2012-05-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferromagnetic Josephson switching device with high characteristic voltage
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4723576
10.1063/1.4723576
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