banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ferromagnetic Josephson switching device with high characteristic voltage
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of SI(S)FS (open circles) and reference SI(S)S (line) with 14-nm ferromagnetic layer Josephson junctions fabricated on different samples from the same wafer. Inset shows a current-voltage characteristic of a SI(S)FS Josephson junction externally shunted with a small resistor.

Image of FIG. 2.
FIG. 2.

Hysteretic dependence of critical current Ic on magnetic H field for Nb-Al/AlOx-Nb-PdFe-Nb shunted SI(S)FS MJJ with a 14 nm ferromagnet layer. Magnetic field sweep directions are shown by arrows. Insets show dual-polarity Ic(H) and magnetization curves Φ(H).

Image of FIG. 3.
FIG. 3.

Switching of SI(S)FS MJJ between “0” and “1” states by remagnetization with external magnetic field. V(t) – average junction voltage and H(t) – applied magnetic field.

Image of FIG. 4.
FIG. 4.

The Ic(H) dependencies for a SI(S)FS MJJ, verifying a memory retention over 7 h. (a) Ic(H) curve with the external magnetic field swept from −20 Oe to 15 Oe. (b) Ic(H) curve with the external magnetic field increased from −20 Oe to O Oe (closed circles) and then after a 7 h hold time further increased from 0 Oe to 15 Oe (open circles).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ferromagnetic Josephson switching device with high characteristic voltage