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Scanning electron microscope image of a suspended carbon nanotube sample. The Pt/W layer of the antenna and gate is shown in yellow (light gray), while the silicon nitride substrate is shown in green (dark gray). The iron-molybdenum catalyst particle is indicated by the arrow. The gate is located in a 250 nm deep trench. The inset shows a schematic representation of a cut through at the nanotube location.
Zero-current offset voltage as a function of the temperature increase in the nanotube under microwave irradiation (bottom axis) and the incident power on the antenna (top axis). The top-left inset shows the low-bias current-voltage characteristics. Curve 1 (black) is for the suspended carbon nanotube at 5 K, curve 2 (blue) is taken under heating of the entire substrate-lead-nanotube system to 15 K, and curve 3 (red) is taken under microwave irradiation with the bath temperature 5 K. The bottom-left inset shows a schematic representation of the experimental setup with microwave radiation incident on the sample.
Power-law scaling of the differential conductance with bias voltage and temperature, indicative of a Luttinger liquid. The different curves correspond to an increase in the sample temperature from 6 K (bottom, blue) to 15 K (top, red). The thick black line shows the power-law scaling with bias voltage at high bias, with a scaling exponent of . The black curves are fits from Eq. (3). The inset shows the zero-bias differential conductance as a function of temperature, where the red line is a power law fit to the high temperature data, giving .
Differential conductance of the suspended carbon nanotube as a function of bias voltage under increasing microwave power. The different curves correspond to an increase in the incident 108 GHz power from 0 nW (bottom, blue) to 8.3 nW (top, red). The black curves are fits from Eq. (3), with The inset shows the effective temperature determined from the zero-bias conductance, as a function of incident microwave power.
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