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Transistor laser optical and electrical linearity enhancement with collector current feedback
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10.1063/1.4723874
/content/aip/journal/apl/100/22/10.1063/1.4723874
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4723874
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Figures

Image of FIG. 1.
FIG. 1.

(i) Collector IC − VCE characteristics (12 °C) of a single QW transistor laser (cavity length L = 200 μm) displaying current gain compression owing to the shift from spontaneous (I < ITH) to stimulated (I > ITH) recombination. (ii) Single facet laser output L − VCE characteristics, showing the enhanced optical output power above threshold. The open circles represent the bias settings for linearity measurements.

Image of FIG. 2.
FIG. 2.

Experimental arrangement for TL electrical feedback test. f1 and f2: input RF signals, ESA: electrical spectrum analyzer, PD: photodetector, and G: amplifier (gain). Transistor laser biased at IB and VCE (see Fig. 1).

Image of FIG. 3.
FIG. 3.

Effect of collector feedback on transistor laser collector and optical RF output spectra. IB = 30 mA and VCE = 1.5 V, and fundamental frequencies set at f1 = 20 and f2 = 20.05 MHz.

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/content/aip/journal/apl/100/22/10.1063/1.4723874
2012-05-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transistor laser optical and electrical linearity enhancement with collector current feedback
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4723874
10.1063/1.4723874
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