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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors
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10.1063/1.4724207
/content/aip/journal/apl/100/22/10.1063/1.4724207
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4724207

Figures

Image of FIG. 1.
FIG. 1.

Measured gate current as a function of the magnitude of the gate voltage for two type A devices. Dotted lines represent fitting lines with slope 1 and solid lines have slope 2.

Image of FIG. 2.
FIG. 2.

Measured gate current as a function of the magnitude of the gate voltage for device B2 before and after stress. Dotted lines represents fitting lines with slope 1 and solid lines have slope 2.

Tables

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Table I.

Device configuration features of the AlGaN/GaN HEMTS used in this study.

Generic image for table
Table II.

List of extracted gate leakage path electron transport parameters. Extrapolating μ 0 = 10.4 cm2/(V s) extracted from A1, the leakage path electron carrier densities of A3 and B2 are in the order of 1016 to 1017 cm−3.

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/content/aip/journal/apl/100/22/10.1063/1.4724207
2012-06-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/22/10.1063/1.4724207
10.1063/1.4724207
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