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Id-Vg characteristic transfer curves after (a) self-heating stress carried out with Vg = 25 V, Vd = 20 V and a grounded source (b) positive gate-bias stress with Vg = 25 V and grounded source/drain. The inset of (b) shows the evolution of threshold voltage and the corresponding fitting curves.
Gate-to-drain capacitance (CGD) and gate-to-source capacitance (CGS) characteristic curves at initial state and after stress.
Id-Vg transfer curves under forward- and reverse-operation modes after (a) FD stress with Vg = 25 V, a grounded source and a floating drain (b) FS stress with Vg = 25 V, Vd = 20 V and a floating source.
(a) Id-Vg transfer curves under forward- and reverse-operation modes after AC stress with complementary pulses imposed on the source and drain; rising/falling time, width, and period are 100 ns, 500 ms, and 1 s, respectively. (b) Evolution of threshold voltage shift after DC, AC self-heating stress and positive gate-bias stress. Symbols represent experimental data and lines represent fitting curves.
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