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Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors
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10.1063/1.4723573
/content/aip/journal/apl/100/23/10.1063/1.4723573
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4723573
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Id-Vg characteristic transfer curves after (a) self-heating stress carried out with Vg = 25 V, Vd = 20 V and a grounded source (b) positive gate-bias stress with Vg = 25 V and grounded source/drain. The inset of (b) shows the evolution of threshold voltage and the corresponding fitting curves.

Image of FIG. 2.
FIG. 2.

Gate-to-drain capacitance (CGD) and gate-to-source capacitance (CGS) characteristic curves at initial state and after stress.

Image of FIG. 3.
FIG. 3.

Id-Vg transfer curves under forward- and reverse-operation modes after (a) FD stress with Vg = 25 V, a grounded source and a floating drain (b) FS stress with Vg = 25 V, Vd = 20 V and a floating source.

Image of FIG. 4.
FIG. 4.

(a) Id-Vg transfer curves under forward- and reverse-operation modes after AC stress with complementary pulses imposed on the source and drain; rising/falling time, width, and period are 100 ns, 500 ms, and 1 s, respectively. (b) Evolution of threshold voltage shift after DC, AC self-heating stress and positive gate-bias stress. Symbols represent experimental data and lines represent fitting curves.

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/content/aip/journal/apl/100/23/10.1063/1.4723573
2012-06-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4723573
10.1063/1.4723573
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