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Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
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Image of FIG. 1.
FIG. 1.

(a) Results of a step-stress experiment carried out as described in Ref. 3 with source floating, increasing voltages are applied between drain and gate for 120 s. Leakage current does not significantly increase as a consequence of stress, indicating that the “critical voltage” for reverse-bias degradation is greater than 100 V. (b) Power dissipation and channel temperature levels for the different stress conditions adopted within this work (drain voltage is 30 V). (c) False-color EL pattern measured in on-state conditions on one of the analyzed samples.

Image of FIG. 2.
FIG. 2.

(a) Output characteristics (measured at increasing gate voltage levels, from −6 V to 0 V, step 1 V) and (b) transconductance curves (measured at increasing drain voltage levels, from 1 V to 3 V) before and after a 14 h stress test at VGS = −1 V, VDS = 30 V.

Image of FIG. 3.
FIG. 3.

(a) EL vs gate voltage curves measured on one of the analyzed samples submitted to stress at VDS = 30 V, VGS = −1 V. (b) Decrease in drain current and (c) in the EL/ID signal measured on the same sample during stress.

Image of FIG. 4.
FIG. 4.

(a) Degradation of drain current measured on identical devices submitted to stress at several gate voltage levels, with a drain voltage of 30 V. (b) Dependence of the EL signal and (c) of the degradation rate (percentage drain current decrease after 14 h of stress) on the gate voltage level used for the stress tests.

Image of FIG. 5.
FIG. 5.

Dependence of TTF on the EL signal emitted by the devices during stress. Dashed line is a linear fit of the experimental data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons