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Stresses in the cutting zone during machining.
Angular distribution functions of silicon and 3C-SiC.
Radial distribution function of 3C-SiC during nanometric cutting.
sp2 geometry of SiC from current work (top portion) and single wall SiC nanotubes with chirality (6,6 ordered) having energy 0.49 eV per SiC atomic pair and Si-C bond length between 1.79 and 1.80 Å, (bottom portion) “Reprinted with permission from Menon et al., Phys. Rev. B 69, 115322 (2004). Copyright © 2004 American Physical Society.”
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