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Shear instability of nanocrystalline silicon carbide during nanometric cutting
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10.1063/1.4726036
/content/aip/journal/apl/100/23/10.1063/1.4726036
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4726036
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Stresses in the cutting zone during machining.

Image of FIG. 2.
FIG. 2.

Angular distribution functions of silicon and 3C-SiC.

Image of FIG. 3.
FIG. 3.

Radial distribution function of 3C-SiC during nanometric cutting.

Image of FIG. 4.
FIG. 4.

sp2 geometry of SiC from current work (top portion) and single wall SiC nanotubes with chirality (6,6 ordered) having energy 0.49 eV per SiC atomic pair and Si-C bond length between 1.79 and 1.80 Å, (bottom portion) “Reprinted with permission from Menon et al., Phys. Rev. B 69, 115322 (2004). Copyright © 2004 American Physical Society.”

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/content/aip/journal/apl/100/23/10.1063/1.4726036
2012-06-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shear instability of nanocrystalline silicon carbide during nanometric cutting
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4726036
10.1063/1.4726036
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