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Identifying passivated dynamic force microscopy tips on H:Si(100)
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) STM image of the H:Si(100)-(2 × 1) surface taken with a bias voltage of +1.5 V and set-point tunnel current of 100 pA; (b) constant frequency shift DFM image of the same surface (but a different region) where the H atoms of the dimers appear as depressions, i.e., “inverted” contrast (Δfsp  = –21.5 Hz; oscillation amplitude = 300 pm). A ball-and-stick model showing the positions of the H-terminated dimers is overlaid on the image; (c) ball-and-stick model of the monohydride termination of the H:Si(100) surface which shows schematically the types of atomic site at which spectra were taken. The site numbers are overlaid on the accompanying DFM image for clarity.

Image of FIG. 2.
FIG. 2.

Comparison of experimental and theoretical difference force-distance (F(z)) curves (see text) taken with (a) a reactive tip with a free Si dangling bond at its apex, and (b) a H-passivated tip. Open circles: experimental difference curve (Site 1-Site 2, see Fig. 1(c)); filled circles: DFT-simulated difference curve; filled squares: DFT spectra calculated above a hydrogen atom (Site 1); filled triangles: DFT spectra calculated at positions between the dimer rows (Site 2). Note that the same experimental difference curve is shown in (a) and (b) to facilitate direct comparison with theory.

Image of FIG. 3.
FIG. 3.

DFM images taken with a non-inverting tip state. Dimers now appear as protrusions (a), (b), and at higher resolution (c), the individual H atoms are resolved (again, as protrusions). Images (a)-(c) acquired with Δfsp  = −27.1 Hz, −23 Hz, and −30 Hz, respectively; oscillation amplitude = 300 pm for all images. A ball-and-stick model showing the relationship between the DFM features and the passivated dimers of the H:Si(100) surface is overlaid on each image.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identifying passivated dynamic force microscopy tips on H:Si(100)