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Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)
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10.1063/1.4726281
/content/aip/journal/apl/100/23/10.1063/1.4726281
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4726281
/content/aip/journal/apl/100/23/10.1063/1.4726281
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/content/aip/journal/apl/100/23/10.1063/1.4726281
2012-06-07
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/23/10.1063/1.4726281
10.1063/1.4726281
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