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Relationship between threading dislocation and leakage current in 4H-SiC diodes
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10.1063/1.4718527
/content/aip/journal/apl/100/24/10.1063/1.4718527
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4718527
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sectional structure of diodes: (a) SBD, (b) JBSD, and (c) PND.

Image of FIG. 2.
FIG. 2.

Reverse I–V characteristics of diodes: (a) SBD, (b) JBSD, and (c) PND.

Image of FIG. 3.
FIG. 3.

Relationship between leakage current density and threading dislocation density.

Image of FIG. 4.
FIG. 4.

Emission microscope images at −1200 V and laser microscope images after KOH etching.

Image of FIG. 5.
FIG. 5.

Sectional TEM image of nano-scale pit directly above threading dislocation.

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/content/aip/journal/apl/100/24/10.1063/1.4718527
2012-06-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relationship between threading dislocation and leakage current in 4H-SiC diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4718527
10.1063/1.4718527
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