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Sectional structure of diodes: (a) SBD, (b) JBSD, and (c) PND.
Reverse I–V characteristics of diodes: (a) SBD, (b) JBSD, and (c) PND.
Relationship between leakage current density and threading dislocation density.
Emission microscope images at −1200 V and laser microscope images after KOH etching.
Sectional TEM image of nano-scale pit directly above threading dislocation.
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