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Effect of thermal inhomogeneity for terahertz radiation from intrinsic Josephson junction stacks of Bi2Sr2CaCu2O8+ δ
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Image of FIG. 1.
FIG. 1.

(a) Microscope image of a device, showing mesas and upper electrodes. (b) Schematic illustration of the cross section of the mesa structure. (c) Diagram of detection system.

Image of FIG. 2.
FIG. 2.

I–V characteristics (a) and bolometer response in B-1 at 50 K as a function of either bias current (b) or voltage (b). In (d), I–V characteristics of B-1 at temperatures from 20 to 64 K with an interval of 2 K are plotted. For all panels, colored symbols represent bolometric detections of THz wave with the detected power being scaled by color-bar in the panel (d). A red rectangle in (a) corresponds to the axes of the blow-up plot shown in Fig. 3(a). Thick red arrows indicate onset and end of the high-bias emission when bias is decreased.

Image of FIG. 3.
FIG. 3.

Blow-up plots of quasiparticle branch of I–V characteristics in mesas B-1 (a) and C-1 (b) at 50 K. Small voltage steps shown by red arrows are found at onset and offset of emission whereas no voltage step was found in C-1. Inset in (b) is entire I–V characteristics of C-1. Colors in (a) represent detected intensity as scaled by color-bar.


Generic image for table
Table I.

Sample used in this study and their values for te , Tc , Ic at ∼20 K, the voltage and temperature ranges where THz radiation was observed. A-2a and 2b are on the same crystal chip. No emission was observed in the two C-type devices.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal inhomogeneity for terahertz radiation from intrinsic Josephson junction stacks of Bi2Sr2CaCu2O8+δ