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Photoexcited carrier dynamics in AlInN/GaN heterostructures
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10.1063/1.4729033
/content/aip/journal/apl/100/24/10.1063/1.4729033
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4729033
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the AlInN/GaN heterostructure at different temperatures. The inset shows AlInN PLE spectrum at 300 K.

Image of FIG. 2.
FIG. 2.

AlInN PL transients at different temperatures.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the short and long AlInN PL decay times and . The inset shows dependence of the ratio of the weight coefficients.

Image of FIG. 4.
FIG. 4.

GaN PL rise time and the measurement system response function. The inset shows calculated band profile of the Al0.86In0.14N/GaN heterostructure with 1 nm Al0.9Ga0.1N spacer. Red lines schematically indicate the region for the sub-band gap hole transport.

Image of FIG. 5.
FIG. 5.

SNOM maps of the AlInN PL intensity (a), the GaN PL intensity (b), correlation between the GaN and AlInN PL intensities, (c) and the GaN peak wavelength (d).

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/content/aip/journal/apl/100/24/10.1063/1.4729033
2012-06-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoexcited carrier dynamics in AlInN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4729033
10.1063/1.4729033
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