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PL spectra of the AlInN/GaN heterostructure at different temperatures. The inset shows AlInN PLE spectrum at 300 K.
AlInN PL transients at different temperatures.
Temperature dependence of the short and long AlInN PL decay times and . The inset shows dependence of the ratio of the weight coefficients.
GaN PL rise time and the measurement system response function. The inset shows calculated band profile of the Al0.86In0.14N/GaN heterostructure with 1 nm Al0.9Ga0.1N spacer. Red lines schematically indicate the region for the sub-band gap hole transport.
SNOM maps of the AlInN PL intensity (a), the GaN PL intensity (b), correlation between the GaN and AlInN PL intensities, (c) and the GaN peak wavelength (d).
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