1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A hybrid superconductor-normal metal electron trap as a photon detector
Rent:
Rent this article for
USD
10.1063/1.4729417
/content/aip/journal/apl/100/24/10.1063/1.4729417
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4729417
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron micrograph of the sample, fabricated in a three-shadow deposition sequence, including Cr resistor and S(Al) and N(AuPd) leads ordered from top to bottom. Inset: equivalent circuit projecting the SIN tunnel junctions (double boxes with the crossed item for S- and the open item for N-leads), Cr resistor, an effective impedance of the environment of the emitter SET B, R env, and symbolically propagation of photons towards the trap (detector). The short horizontal steps depict the electrostatic barrier for the electron charge captured in the trapping node (the state with energy E 0 marked by the black circle).

Image of FIG. 2.
FIG. 2.

Effect of the emitter SET B on the hold times of the trap. (a) Time traces taken simultaneously for SET A and SET B. The electrostatic barrier was symmetrized for achieving the similar average dwell times (=hold times) for the upper and lower charge states; see the trace for SET A. (b) Correlated behaviour of both voltage V B and hold time in response to a modulation of the gate voltage V gB. The bias points were chosen for both SETs on the QP tunneling branches of the IV-curves with strongly dissimilar currents, I A = 0.1 nA and I B  = 1 nA. Two energy pictographs, “max.CB” and “min.CB,” correspond to the gate regimes of SET with the strongest (requiring the maximum value of V B) and the weakest (the minimum value of voltage V B across SET B) Coulomb blockade, respectively. In the state “max.CB” one of two tunneling steps is capable to release a photon with the energy up to , which is high enough to excite a QP when absorbed in the trap.

Image of FIG. 3.
FIG. 3.

(a) Two different data sets with the hold times plotted as a function of voltage V B. (b) The same hold times plotted vs. total power P B dissipated in the emitter SET B. Two sets of measurements are shown: (1) obtained at a fixed bias current I B = 1 nA by varying the gate voltage V gB (stars); (2) measured at fixed gate voltage (in the minimum of V B) by incrementing I B = 1, 1.1,… 1.5 nA (diamonds). The solid lines in (a) show the photon emission rates calculated with the following parameters: fixed I B = 1 nA, T e = 0.5 K, E SETB = 280 μeV, Δ = 250 μeV, R T = 150 kΩ, where E SETB is the charging energy of SET B defined in the same way as that of the trap. We model the environment of SET B by R env = 1 and 1.25 kΩ and T env = 300 and 250 mK for the top and the bottom curves, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/100/24/10.1063/1.4729417
2012-06-11
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A hybrid superconductor-normal metal electron trap as a photon detector
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/24/10.1063/1.4729417
10.1063/1.4729417
SEARCH_EXPAND_ITEM