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Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon
11. Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya, Appl. Phys. Lett. 99, 132511 (2011);
11. Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, K. Masaki, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, Phys. Rev. B 85, 035320 (2012).
15. Y. Saito, M. Ishikawa, T. Inokuchi, H. Sugiyama, T. Tanamoto, K. Hamaya, N. Tezuka, “Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices,” IEEE Trans. Mag. (to be published).
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28.RSi = (W/w)ρSiλSi, where λSi at 20 K is assumed to be ∼2.0 μm, (Ref. 9) W ∼ 2.0 μm, w ∼ 70 nm, and ρSi ∼ 3.0 × 10−3 Ω cm.
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