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Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon
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10.1063/1.4728117
/content/aip/journal/apl/100/25/10.1063/1.4728117
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4728117
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of a lateral three-terminal device studied. (b) Room-temperature I–V characteristics of three devices with different MgO tunnel barrier thicknesses. (c) The resistance RA as a function of MgO thickness at room temperature in the CoFe/MgO/n +-Si junctions.

Image of FIG. 2.
FIG. 2.

(a) The three-terminal Hanle-effect signal at 20 K for device A. The solid curve is the fitting result by using Eq. (1). (b) |ΔV| vs (V/I)A at 20 K. (c) The temperature dependence on |ΔV| for various devices. The inset shows a room-temperature spin signal for device A.

Image of FIG. 3.
FIG. 3.

Schematic diagrams of spin accumulation near the CoFe/MgO/n +-Si interface for a contact with (a) higher or (b) lower interface resistance.

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/content/aip/journal/apl/100/25/10.1063/1.4728117
2012-06-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4728117
10.1063/1.4728117
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