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Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material
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10.1063/1.4729416
/content/aip/journal/apl/100/25/10.1063/1.4729416
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729416
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the wet-etching apparatus.

Image of FIG. 2.
FIG. 2.

Simulation of the reflection spectra as the thickness of the a-Si:H film varies between 230 and 220 nm. The a-Si:H film is assumed to be on a silica layer with a thickness of 2 μm on a Si wafer surface.

Image of FIG. 3.
FIG. 3.

Decrease in the thickness of the a-Si:H layer with etching time. Measurements 1–4 correspond to experiments carried out at different temperatures. The temperatures of the etchant over time are also shown.

Image of FIG. 4.
FIG. 4.

SEM image of a cross-section of the waveguide made using the wet-etched film.

Image of FIG. 5.
FIG. 5.

Propagation loss measurements of waveguides using the cut-back method at a wavelength of 1.55 μm in TE polarization mode. (a) Waveguides made using an as-deposited a-Si:H film with a thickness of 225 nm and (b) waveguides made using a wet-etched a-Si:H film with a thickness of 220 nm.

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/content/aip/journal/apl/100/25/10.1063/1.4729416
2012-06-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729416
10.1063/1.4729416
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