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Schematic diagram of the wet-etching apparatus.
Simulation of the reflection spectra as the thickness of the a-Si:H film varies between 230 and 220 nm. The a-Si:H film is assumed to be on a silica layer with a thickness of 2 μm on a Si wafer surface.
Decrease in the thickness of the a-Si:H layer with etching time. Measurements 1–4 correspond to experiments carried out at different temperatures. The temperatures of the etchant over time are also shown.
SEM image of a cross-section of the waveguide made using the wet-etched film.
Propagation loss measurements of waveguides using the cut-back method at a wavelength of 1.55 μm in TE polarization mode. (a) Waveguides made using an as-deposited a-Si:H film with a thickness of 225 nm and (b) waveguides made using a wet-etched a-Si:H film with a thickness of 220 nm.
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