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(a) Circuit diagram of the measurement setup and scanning electron microscope (SEM) image of a representative InAs nanowire DQD device. (b) Photograph of the rf circuit board showing the sample, bias tee, and dc lines. (c) Amplitude and phase response measured using a network analyzer with the sample held at a temperature of 35 mK.
(a) SEM image of a typical device. Three gates are energized with voltages and to define a single dot. Other gates are biased at positive voltages to prevent the formation of unintentional quantum dots. (b) Energy level diagram of the single dot. The gate voltage primarily controls the occupancy of the quantum dot, while and tune the height of the tunnel barriers. (c) Current through the dot, I, and (d) normalized amplitude response of the resonator, , plotted as a function of and source-drain voltage . Coulomb diamonds are observed in both measurements.
Phase shift, , measured as a function of and , with a source-drain voltage VSD = 0 V. The DQD charge stability diagram is clearly visible in the phase response of the resonator. Inset: Energy level diagram of the DQD. Gate voltages VL (VR ) primarily tune the occupancy in the left (right) dot.
(a) Normalized amplitude response, , and (b) phase shift, , measured as a function of VR and VL . (c) measured along the vertical dashed line in (b) reveals the (1,1) (1,0) charge transition with the lead as well as the (1,0) (0,1) interdot charge transition.
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