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Scanning electron micrographs of reversed micro-pyramid of 267 nm height and a facet angle of 30°.
Simulation of GaAs micro-pyramid formation during wet-chemical etching using a master equation approach. Due to the higher etching rate in the AlAs sacrificial layer, the facet formation occurs.
(a) Illustrated absolute value of Poynting vector from FDTD simulation at the end of simulation time with logarithmic color scale. The inset shows time-integrated values. Gray borders mark the beginning of the absorbing perfectly matched layers (PMLs); red and green dashed lines indicate surfaces at which the power flow into the substrate and vacuum is calculated, respectively (see text). (b) The spectral power flow from FDTD and FEM simulations show good agreement on out-coupling efficiencies of about 80%–90% over the complete spectrum.
(a) QD emission line measured with the two SPADs of the HBT set-up. Full width of half maximum is limited by the set opening of the output slit. (b) Excitation power-dependent measurement reveals excitonic nature of QD emission.
Emission spectrum of quantum-dot cavity (a) and its second order correlation function (b). Single QD lines can be well separated in the spectrum. The low value of g(2)(0) proves the single-photon character of the emission.
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