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(a) X-ray diffraction patterns for Zn1− x Ga x O (x = 0.015, 0.020) and SPS-sintered Zn0.985Ga0.015O bulk and (b) a and c lattice parameters as a function of Ga doping.
Temperature dependence of (a) the electrical conductivity σ (the inset shows plots of the variation of Hall mobility, μ Hall, and carrier concentration, n e, at 50 °C). (b) Seebeck coefficient S and (c) the power factor of the Zn1− x Ga x O (x = 0.005, 0.010, 0.015, 0.020) bulks (the inset shows temperature dependence of κ and ZT of Zn0.985Ga0.015O). Solid squares represent the data for Zn0.98Al0.02O sample in Ref. 1.
(a) DOS effective mass md * for the Zn1− x Ga x O (x = 0.005, 0.010, 0.015, 0.020) bulks as a function of Ga doping (the inset shows the temperature dependence of md *) and (b) md * as a function of the c/a lattice ratio.
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