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An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility
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10.1063/1.4729560
/content/aip/journal/apl/100/25/10.1063/1.4729560
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729560
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction patterns for Zn1− x Ga x O (x = 0.015, 0.020) and SPS-sintered Zn0.985Ga0.015O bulk and (b) a and c lattice parameters as a function of Ga doping.

Image of FIG. 2.
FIG. 2.

Temperature dependence of (a) the electrical conductivity σ (the inset shows plots of the variation of Hall mobility, μ Hall, and carrier concentration, n e, at 50 °C). (b) Seebeck coefficient S and (c) the power factor of the Zn1− x Ga x O (x = 0.005, 0.010, 0.015, 0.020) bulks (the inset shows temperature dependence of κ and ZT of Zn0.985Ga0.015O). Solid squares represent the data for Zn0.98Al0.02O sample in Ref. 1.

Image of FIG. 3.
FIG. 3.

(a) DOS effective mass md * for the Zn1− x Ga x O (x = 0.005, 0.010, 0.015, 0.020) bulks as a function of Ga doping (the inset shows the temperature dependence of md *) and (b) md * as a function of the c/a lattice ratio.

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/content/aip/journal/apl/100/25/10.1063/1.4729560
2012-06-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729560
10.1063/1.4729560
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