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Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods
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10.1063/1.4729751
/content/aip/journal/apl/100/25/10.1063/1.4729751
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729751
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Capacitance spectra (125–300 K) of three CZTSSe cells with various band gaps: (a) 1.07 eV (b) 1.19 eV, (c) 1.51 eV. The transition frequencies, fT , of the dielectric freeze out effect are obtained from the peaks of the G/f curves [black circles in panel (a)]. The average thickness of the absorber layer, t, is indicated in each case (see Ref. 12).

Image of FIG. 2.
FIG. 2.

(a) Solar cell series resistance deduced from the dark J–V curves and the capacitance spectra (C–f) (also collected in the dark), demonstrating reasonable agreement. (b) Acceptor level determination for cell S4 from ln(fT /T 1.5) plot. (c) Summary of the acceptor levels (dashed line is guide to the eye) and dielectric constants (relative to vacuum) determined from the capacitance spectra. The blue filled circles are the theoretical values of the dielectric constants from Ref. 2, the dashed line is their linear interpolation and the star points are the experimental data.

Image of FIG. 3.
FIG. 3.

Standard C–V (open symbols) and DLCP profiles (filled symbols) obtained at 5 kHz for the four CZTSSe cells indicated.

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/content/aip/journal/apl/100/25/10.1063/1.4729751
2012-06-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729751
10.1063/1.4729751
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