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Determination of conduction band offset between strained CdSe and ZnSe layers using deep level transient spectroscopy
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10.1063/1.4729764
/content/aip/journal/apl/100/25/10.1063/1.4729764
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729764
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic view of the band structure in a UTQW, (b) schematic view of the sample structure, and (c) CV measurement of the sample at RT in darkness. In the inset the C 2 vs V analysis is shown. A charge carrier density of n = 1.2 × 1015 cm 3 and a built-in potential Vbi  = 0.98 V are obtained.

Image of FIG. 2.
FIG. 2.

Schematic view of the band structure of sample S3ML at zero bias. The parameters δ and ɛ have the values of 2.4 × 10 6 eV/nm2 and 1134 nm, respectively, while the variable x is the depth measured from the Au Schottky contact. The variables EC , EV , and EF are the bottom of the conduction band, the top of the valence band, and the Fermi level, respectively. In the inset, a schematic view of one of the UTQW inside the depletion region is shown, defining the variable Δ.

Image of FIG. 3.
FIG. 3.

(a) DLTS spectra done at different repetition rates, (b) Arrhenius plot and linear fitting of e/T (black squares using the left y-axis, obtaining Eact  = 223 ± 10 meV) and of e/T 2 (open circles using the right y-axis, obtaining Eact  = 212 ± 10 meV), where e is the emission and T temperature, (c) and (d) comparison of DLTS scans done on samples S1ML (straight line) and S3ML (open symbols) with 100 Hz and 1 kHz repetition rates, respectively.

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/content/aip/journal/apl/100/25/10.1063/1.4729764
2012-06-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of conduction band offset between strained CdSe and ZnSe layers using deep level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729764
10.1063/1.4729764
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