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Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
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10.1063/1.4729787
/content/aip/journal/apl/100/25/10.1063/1.4729787
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729787
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD pattern of the LZO film deposited on p+-silicon substrate obtained in Bragg–Brentano geometry, and the inset shows the AFM image of the corresponding LZO film and (b) UV–VIS transmittance spectra of the LZO film deposited on glass substrate.

Image of FIG. 2.
FIG. 2.

(a) Hysteresis loops measured at different applied voltages and (b) capacitance vs voltage measured at a frequency of 1 kHz of the p+-Si/LZO/Ag device structure. The inset shows the leakage current density of the p+-Si/LZO/Ag device structure.

Image of FIG. 3.
FIG. 3.

(a) Schematic of device structure, (b) output characteristics, and (c) transfer characteristics of LZO homo-junction Fe-TFTs using LZO as ferroelectric and active layers; (d) Retention properties of on- and off-states of LZO Fe-TFTs measured under VDS = 1 V and VGS = 0 V for 2000 s.

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/content/aip/journal/apl/100/25/10.1063/1.4729787
2012-06-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729787
10.1063/1.4729787
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