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(a) XRD pattern of the pure BFO film where 1 and 2 denote the (100) and (200) peaks of the film, respectively. Note that Gd doped films have nearly the same pattern (not shown here), (b) C-V characteristic at RT for single phase BFO layer. Measurement performed at 100 kHz with an amplitude of 0.1 V for the ac signal.
I-V characteristics at RT for different Gd doping of the BFO layer.
I-V characteristics at different temperatures for BFO films with no Gd doping (a), with 5% Gd doping (b) and with 10% Gd doping (c).
The voltage dependence of the potential barrier in the case of BFO films with different Gd doping, on STON substrates. The confidence factor for the linear fit is in all cases higher than 0.99.
The 1/C2 vs. voltage representation for the pure BFO film.
The estimated values for the density of free carriers n and for the built-in potential Vbi for different values of the Gd doping. The estimates were performed considering a thickness of about 100 nm for the BFO films and a value of 800 for the static dielectric constant. The last value is based on the fact that the capacitance value at −1V is about the same for all samples.
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