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Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates
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10.1063/1.4729819
/content/aip/journal/apl/100/25/10.1063/1.4729819
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729819
/content/aip/journal/apl/100/25/10.1063/1.4729819
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/content/aip/journal/apl/100/25/10.1063/1.4729819
2012-06-19
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729819
10.1063/1.4729819
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