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Plasma-assisted growth and nitrogen doping of graphene films
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10.1063/1.4729823
/content/aip/journal/apl/100/25/10.1063/1.4729823
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729823

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of a graphene sheet transferred onto SiO2/Si wafer, (b) Raman spectrum of a graphene sheet atop SiO2/Si substrate, (c) 2D (2662 cm−1), (d) G (1585 cm−1), and (e) D band (1330 cm−1) Raman mapping images of a graphene sheet, respectively.

Image of FIG. 2.
FIG. 2.

Raman spectra of the graphene sheets grown with the cooling processes at a controlled rate of 25 °C/min (black) and cooling naturally (red). Two samples were subjected to the same plasma treatment process.

Image of FIG. 3.
FIG. 3.

Raman spectra of graphene films on Cu foils synthesized at substrate temperatures of 400, 500, 600, and 700 °C. The microwave power was maintained at 1300 W for all samples.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra of a graphene sheet on copper foil before and after plasma treatment in N2/H2 gas mixture. (b) C1s and (c) N1s high-resolution XPS spectra of nitrogen-doped graphene. The inset in (b) is the XPS survey spectrum.

Tables

Generic image for table
Table I.

The FWHMs (W) of D, D′, G, and 2D bands and AG/A2D values of samples grown at different temperatures.

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/content/aip/journal/apl/100/25/10.1063/1.4729823
2012-06-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma-assisted growth and nitrogen doping of graphene films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729823
10.1063/1.4729823
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