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(a) AFM image of a graphene sheet transferred onto SiO2/Si wafer, (b) Raman spectrum of a graphene sheet atop SiO2/Si substrate, (c) 2D (2662 cm−1), (d) G (1585 cm−1), and (e) D band (1330 cm−1) Raman mapping images of a graphene sheet, respectively.
Raman spectra of the graphene sheets grown with the cooling processes at a controlled rate of 25 °C/min (black) and cooling naturally (red). Two samples were subjected to the same plasma treatment process.
Raman spectra of graphene films on Cu foils synthesized at substrate temperatures of 400, 500, 600, and 700 °C. The microwave power was maintained at 1300 W for all samples.
(a) Raman spectra of a graphene sheet on copper foil before and after plasma treatment in N2/H2 gas mixture. (b) C1s and (c) N1s high-resolution XPS spectra of nitrogen-doped graphene. The inset in (b) is the XPS survey spectrum.
The FWHMs (W) of D, D′, G, and 2D bands and AG/A2D values of samples grown at different temperatures.
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