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Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Sketch of the oxidation process: after oxygen exposure the Si dangling bonds between SiC and interface are saturated by oxygen. (b) Band structure of epitaxial graphene on SiC(0001), near the K point, obtained by μ-ARPES (photon energy 40 eV), before and after oxidation. The Dirac point () and the Fermi level () are indicated by dark and gray lines, respectively.

Image of FIG. 2.
FIG. 2.

Longitudinal (black) and Hall (red) magnetoresistivity at a temperature T = 1.6 K. The Hall plateau at fields T corresponds to a filling factor . Inset: optical image of a typical Hall bar; the central region is .

Image of FIG. 3.
FIG. 3.

(a) Annealing curve showing the longitudinal resistivity as a function of the measured temperature T*. When the temperature is increased the sample resistivity starts to fluctuate. Above 60 °C, fluctuations are strongly damped and the resistance decreases with increasing temperature. The change in the resistivity is maintained when cooling down to room temperature. (b) Measurements of and at T = 1.6 K, after the annealing. The Hall plateau is not observed.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption