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Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions
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10.1063/1.4729876
/content/aip/journal/apl/100/25/10.1063/1.4729876
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729876

Figures

Image of FIG. 1.
FIG. 1.

(a) Raman spectra for the Ni/SiC samples annealed with different temperatures. The 2D peak was fitted by Lorentzian components in (b).

Image of FIG. 2.
FIG. 2.

The NEXAS spectra for the Ni/SiC samples annealed with different temperatures. For comparison, the related NEXAS spectra for HOPG and pure 6H-SiC crystal are also listed.

Image of FIG. 3.
FIG. 3.

The SEM images for the graphene samples prepared at the temperature of 600 (a), 700 (b) and 800 °C (c). The enlarged surface image for 800 °C is also shown (d).

Image of FIG. 4.
FIG. 4.

The EDX analysis for the annealed Ni/SiC sample at 800 °C. The red-cross shows the focus point on the big grain (a) and on the textured area (b) for the EDX analysis respectively. The related elements ratios are listed in the insets.

Image of FIG. 5.
FIG. 5.

The 2D (a) and 3D profile (b) AFM images for the FLG obtained by annealing the Ni/SiC at 800 °C.

Tables

Generic image for table
Table I.

The related peak positions and the calculated integral strength ratios of ID/IG and La.

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/content/aip/journal/apl/100/25/10.1063/1.4729876
2012-06-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729876
10.1063/1.4729876
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