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(a) Raman spectra for the Ni/SiC samples annealed with different temperatures. The 2D peak was fitted by Lorentzian components in (b).
The NEXAS spectra for the Ni/SiC samples annealed with different temperatures. For comparison, the related NEXAS spectra for HOPG and pure 6H-SiC crystal are also listed.
The SEM images for the graphene samples prepared at the temperature of 600 (a), 700 (b) and 800 °C (c). The enlarged surface image for 800 °C is also shown (d).
The EDX analysis for the annealed Ni/SiC sample at 800 °C. The red-cross shows the focus point on the big grain (a) and on the textured area (b) for the EDX analysis respectively. The related elements ratios are listed in the insets.
The 2D (a) and 3D profile (b) AFM images for the FLG obtained by annealing the Ni/SiC at 800 °C.
The related peak positions and the calculated integral strength ratios of ID/IG and La.
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