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Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer
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10.1063/1.4729880
/content/aip/journal/apl/100/25/10.1063/1.4729880
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729880
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental (open dots) and simulated (solid lines) L–I and I–V characteristics and (b) experimental and simulated EL spectra at 20 and 100 mA for the conventional structure A.

Image of FIG. 2.
FIG. 2.

Schematic plot of the green LEDs under study. Structure A is a conventional green LED. Structure B has identical layer structure with structure A except that the GaN barriers are replaced by asymmetric AlGaN CGBs. Structure C has identical layer structure with structure B except that the AlGaN EBL is removed.

Image of FIG. 3.
FIG. 3.

Simulated L–I–V characteristics and IQEs as a function of injection current for the three LEDs.

Image of FIG. 4.
FIG. 4.

Energy band diagrams near the active region of the three LEDs at 100 mA.

Image of FIG. 5.
FIG. 5.

Electrostatic fields near the active regions of the three LEDs at 100 mA.

Image of FIG. 6.
FIG. 6.

Carrier concentrations near the active regions of the three LEDs at 100 mA.

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/content/aip/journal/apl/100/25/10.1063/1.4729880
2012-06-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4729880
10.1063/1.4729880
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