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(a) Experimental (open dots) and simulated (solid lines) L–I and I–V characteristics and (b) experimental and simulated EL spectra at 20 and 100 mA for the conventional structure A.
Schematic plot of the green LEDs under study. Structure A is a conventional green LED. Structure B has identical layer structure with structure A except that the GaN barriers are replaced by asymmetric AlGaN CGBs. Structure C has identical layer structure with structure B except that the AlGaN EBL is removed.
Simulated L–I–V characteristics and IQEs as a function of injection current for the three LEDs.
Energy band diagrams near the active region of the three LEDs at 100 mA.
Electrostatic fields near the active regions of the three LEDs at 100 mA.
Carrier concentrations near the active regions of the three LEDs at 100 mA.
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