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Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates
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10.1063/1.4730386
/content/aip/journal/apl/100/25/10.1063/1.4730386
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectra of InGaAs/Ge at 10–300 K for excitation power of 70 mW and temperature dependence of integrated PL intensity (inset).

Image of FIG. 2.
FIG. 2.

Time evolution of (a) spin-dependent reflectance and (b) spin polarization of InGaAs/Ge for excitation power of 50 mW at 10 and 100 K (inset). I + and I indicate the cocircular and anticircular polarizations, respectively.

Image of FIG. 3.
FIG. 3.

Dependence of spin relaxation time on temperature for InGaAs/Ge for excitation powers of 30, 50 and 70 mW.

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/content/aip/journal/apl/100/25/10.1063/1.4730386
2012-06-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730386
10.1063/1.4730386
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