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Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices
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FIG. 1.

Schematic design of photosensitive devices with incorporated Ag NPs (a) in the i-n or i-p configurations and (b) in the n-i-p configuration with thin i-layers. Here, the layer structure of the i-n and i-p devices is applied. (c) and (d) SEM image and size histogram of Ag NPs with (23 ± 9) nm average diameter resulting from an initial silver layer thickness of around 5 nm.

Image of FIG. 2.

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FIG. 2.

External quantum efficiency of (a) i-n devices (TCO/i-n/TCO/Ag reflector), as well as (b) i-p devices (TCO/i-p/TCO/Ag reflector) shown in Fig. 1(a) with (thick red line) and without (thin black line) incorporated Ag NPs of 23 nm average particle diameter in between the front TCO and the a-Si:H i-layer. The insets show the behavior in the NIR region with an enlarged ordinate scale.

Image of FIG. 3.

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FIG. 3.

External quantum efficiency of n-i-p devices (TCO/n-i/…/i-p/TCO/Ag-reflector) with (thick red line) and without (thin black line) Ag NPs inside the i-layer.

Image of FIG. 4.

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FIG. 4.

(a) Schematic picture of an Ag NP in the a-Si:H network with created defect sites in direct vicinity of the NP (not true to scale). (b) Generation mechanism for sub bandgap photons in the a-Si:H n-i-p structure. The transition of charge carriers from defect states in direct vicinity of the resonant absorbing Ag NPs is enhanced due to the strong fields. Charge compensation is realized by thermal activation to the band edges.

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/content/aip/journal/apl/100/25/10.1063/1.4730432
2012-06-22
2014-04-20

Abstract

By embedding silver nanoparticles (Ag NPs) of approximately 20 nm diameter inside the intrinsic layer of thin hydrogenated amorphous silicon (a-Si:H) n-i-p devices, a photocurrent is measured for photon energies below the a-Si:H bandgap. This is attributed to the excitation of charge carriers from defect states created by the incorporation of the Ag inside the silicon network. The defect location inside the strong electromagnetic fields close to the resonant absorbing NPs enables high transition rates. This is a proof of concept for the use of the impurity photovoltaic effect in a-Si:H devices.

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Scitation: Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730432
10.1063/1.4730432
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