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Lattice thermal conductivity κ L for the MS and LM Hf1 − x Zr x NiSn1 − y Sb y samples with and without Sb doping. The dash line represents the calculated minimum thermal conductivity κ min of the Hf0.4Zr0.6NiSn0.98Sb0.02 alloy.
Temperature dependence of electrical conductivity for the Hf1 − x Zr x NiSn1 − y Sb y alloys (a), and the electrical conductivity ratio of the MS and LM samples at room temperature as a function of Zr content (b).
Temperature dependence of electrical conductivity for undoped LM and MS Hf1 − x Zr x NiSn samples before and after annealing at 800 °C for 5days. Here, “A” means annealing.
TEM images of the MS Hf0.6Zr0.4NiSn0.98Sb0.02 bulk sample, showing the submicron grains (a) and embedded in-situ nanophases (b). The inset in (b) is the high resolution TEM image of a nanophase.
Carrier concentration n H, electrical conductivity σ, and Seebeck coefficient α of the LM and MS Hf1 − x Zr x NiSn1 − y Sb y alloys at room temperature.
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