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Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography
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10.1063/1.4730437
/content/aip/journal/apl/100/25/10.1063/1.4730437
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730437
/content/aip/journal/apl/100/25/10.1063/1.4730437
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/content/aip/journal/apl/100/25/10.1063/1.4730437
2012-06-20
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730437
10.1063/1.4730437
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