1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography
Rent:
Rent this article for
USD
10.1063/1.4730437
/content/aip/journal/apl/100/25/10.1063/1.4730437
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730437
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional transmission electron microscopic image of a typical 65 nm-node MOSFET. The broken curve shows the position of the needle specimen examined by APT. (b) Normal probability plot as a function of V T of one million n-MOSFETs. The V T measured using the Agilent N9201A Array Structure Parametric Test System are plotted as open circles. The transistors analyzed by APT in this work are plotted as open squares. The frequency distribution of the V T is shown in the inset.

Image of FIG. 2.
FIG. 2.

(a) Three-dimensional elemental maps of actual 65 nm node n-MOSFET (VT = 0.56 V). Nickel, phosphorus, arsenic, oxygen, and boron atoms are shown. Silicon atoms are not shown. (b) A representative mass spectrum of an actual n-MOSFET obtained by APT. An enlarged mass spectrum around the 11B+ signal (mass/charge) in the channel region is shown in the inset.

Image of FIG. 3.
FIG. 3.

Correlation between V T and channel boron concentrations in the 25 × 25 × 30 nm3 box just below the gate-oxide. Closed circles represent the APT data. Open triangles represent the estimated mean concentration of five different channel dose wafers that were measured by secondary ion mass spectrometry.

Loading

Article metrics loading...

/content/aip/journal/apl/100/25/10.1063/1.4730437
2012-06-20
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730437
10.1063/1.4730437
SEARCH_EXPAND_ITEM