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(a) Cross-sectional transmission electron microscopic image of a typical 65 nm-node MOSFET. The broken curve shows the position of the needle specimen examined by APT. (b) Normal probability plot as a function of V T of one million n-MOSFETs. The V T measured using the Agilent N9201A Array Structure Parametric Test System are plotted as open circles. The transistors analyzed by APT in this work are plotted as open squares. The frequency distribution of the V T is shown in the inset.
(a) Three-dimensional elemental maps of actual 65 nm node n-MOSFET (VT = 0.56 V). Nickel, phosphorus, arsenic, oxygen, and boron atoms are shown. Silicon atoms are not shown. (b) A representative mass spectrum of an actual n-MOSFET obtained by APT. An enlarged mass spectrum around the 11B+ signal (mass/charge) in the channel region is shown in the inset.
Correlation between V T and channel boron concentrations in the 25 × 25 × 30 nm3 box just below the gate-oxide. Closed circles represent the APT data. Open triangles represent the estimated mean concentration of five different channel dose wafers that were measured by secondary ion mass spectrometry.
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