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Diagram of the phase-change memory cell with a TiSi3/Ge2Sb2Te5/TiN vertical structure.
(a) Simulated crystallization promotion based on finite element analysis. Crystallization begins with a filament formation with an outline of α. Crystallization then proceeds from β to χ, δ, ɛ, φ, and finally to γ. (b) Temperature distribution of GST when a 1.8 mA pulse is applied. The outline of crystallized area changes from χ to δ.
(a) I-V curves obtained by current sweeping. (b) Dynamic resistance change as a function of sweeping current.
(a) Measured and fitted I-V curves in the subthreshold regime. (b) Device resistance levels and corresponding estimated effective crystalline thicknesses as a function of programming current.
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