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Controlled promotion of crystallization for application to multilevel phase-change memory
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10.1063/1.4730439
/content/aip/journal/apl/100/25/10.1063/1.4730439
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730439
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the phase-change memory cell with a TiSi3/Ge2Sb2Te5/TiN vertical structure.

Image of FIG. 2.
FIG. 2.

(a) Simulated crystallization promotion based on finite element analysis. Crystallization begins with a filament formation with an outline of α. Crystallization then proceeds from β to χ, δ, ɛ, φ, and finally to γ. (b) Temperature distribution of GST when a 1.8 mA pulse is applied. The outline of crystallized area changes from χ to δ.

Image of FIG. 3.
FIG. 3.

(a) I-V curves obtained by current sweeping. (b) Dynamic resistance change as a function of sweeping current.

Image of FIG. 4.
FIG. 4.

(a) Measured and fitted I-V curves in the subthreshold regime. (b) Device resistance levels and corresponding estimated effective crystalline thicknesses as a function of programming current.

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/content/aip/journal/apl/100/25/10.1063/1.4730439
2012-06-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled promotion of crystallization for application to multilevel phase-change memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/25/10.1063/1.4730439
10.1063/1.4730439
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