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(a) A schematic illustration of the memory device and the measurement configuration. The inset shows a cross sectional SEM image of the TaO x film on Pt/Ti/SiO2/Si substrate. (b) I−V curves of 50 consecutive resistive switching loops of a pristine W/TaO x /Pt device. The numbered arrows (1−4) indicate the sweep direction.
XPS spectra of Ta 4f taken at the W/TaO x interface in HRS (a) and LRS (b), and TaO x /Pt interface in HRS (c) and LRS (d), respectively. The black solid line is the measured data and the red solid line is the fitting result which is composed of several parts: the blue dash line denotes the +5 state of Ta, the cyan dash line and the magenta dash line denote the suboxides state of the TaO x film.
(a) Retention data of the W/TaO x /Pt device at room temperature. (b) Temperature dependent resistances in HRS and LRS from 298 K to 510 K. Each data point is acquired 15 min after the temperature reached the setting value. (c) I−V curves of W/TaO x /Pt device at elevated temperature under air condition. The temperatures were varied from 298 K to 479 K.
(a) XRD patterns of TaO x film at as-deposited state and after annealed at 1273 K for 30 min. (b) Typical I−V characteristics of TaO x film before and after annealed.
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